Methods of thermal processing and rapid thermal processing
US6090677A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 29, 1998 |
| Grant date | Jul 18, 2000 |
| Priority date | — |
| Expiry date | Apr 29, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/324
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In one aspect, the invention includes a method of thermal processing comprising: a) providing a semiconductor substrate, the semiconductor substrate supporting a material that is to be thermally processed; b) forming a sacrificial mass over the material, the mass comprising an inner portion and an outer portion, the inner portion having a different composition than the outer portion and being nearer the material than the outer portion; c) exposing the mass to radiation to heat the mass, the exposing being for a period of time sufficient for the material to absorb heat from the mass and be thermally processed thereby; and d) removing the mass from over the material. In another aspect, the invention includes a method of thermal processing comprising: a) providing a semiconductor substrate, the substrate supporting a material that is to be thermally processed; b) forming a first sacrificial layer over the material; c) forming a second sacrificial layer over the first sacrificial layer, the second sacrificial layer comprising a different composition than the first sacrificial layer; d) exposing the second sacrificial layer to radiation to heat the second layer, the exposing being for a…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.