Isolation film of semiconductor device and method for fabricating the same comprising a lower isolation film with a upper isolation film formed on top
US6090682A · kind A · utility
6Cited by
3References
9Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Apr 9, 1998 |
| Grant date | Jul 18, 2000 |
| Priority date | — |
| Expiry date | Apr 9, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76202
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed are an isolation film of a semiconductor device and a method for fabricating the same, which prevent the isolation film from being damaged due to misalignment when forming a contact hole in a region adjacent to the isolation film, to ensure stable effective isolation distance. The isolation film of a semiconductor device includes a semiconductor substrate, a lower isolation film formed in the semiconductor substrate, and an upper isolation film formed on the lower isolation film, with a material having etching selectivity different from the lower isolation film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.