Dry etching method for semiconductor substrate
US6090718A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 17, 1997 |
| Grant date | Jul 18, 2000 |
| Priority date | — |
| Expiry date | Dec 17, 2017 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/906
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
After performing an etching process with respect to one substrate, the substrate is taken out from an etching chamber. Then, a dummy substrate is disposed in the etching chamber and a cleaning process is performed. The cleaning process includes a cleaning step for etching reaction products produced during the etching process to be removed, a seasoning step for adjusting the atmosphere within the etching chamber and the temperature of the substrate, and a purge step for removing suspended foreign materials without generating plasma. By performing the cleaning process, the successive etching process can be performed without generating any black silicon on the substrate, thereby attaining a high production yield.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.