Method for preventing bubble defects in BPSG film
US6090725A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 30, 1999 |
| Grant date | Jul 18, 2000 |
| Priority date | — |
| Expiry date | Aug 30, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02271
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for preventing bubble defects in borophosphosilicate glass (BPSG) film is provided. A wafer for depositing borophosphosilicate glass (BPSG) film is loaded in deposition chamber. After the wafer is properly positioned, the wafer is heated to a predetermined temperature. A process gas is introduced from the gas distribution system to the deposition chamber. A selected pressure of the deposition chamber is set and maintained throughout deposition process. After deposition of the BPSG film, the wafer is loaded out the chamber. Subsequently, helium gas is introduced to purge the liquid injection valve and delivery path. After pumping out the purge gas, the another wafer is then loaded in the chamber for depositing BPSG film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.