Semiconductor device of SiC having an insulated gate and buried grid region for high breakdown voltage

US6091108A · kind A · utility

Assignee

• ABB RESEARCH LTD. · CH

Inventors

• Christopher Harris · Sollentuna, SE
• Bo Bijlenga · Skultuna, SE
• Lennart Zdansky
• Ulf Gustafsson · Linköping, SE
• Mietek Bakowski · Gately Drive, SE
• Andrey Konstantinov · Järfälla, SE

Key dates

• Filing date: Nov 17, 1997
• Grant date: Jul 18, 2000
• Expiry date: Nov 17, 2017

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/8325

Abstract

A semiconductor device of SiC is adapted to hold high voltages in the blocking state thereof. The device comprises two parts (1, 2) each comprising one or more semiconductor layers of SiC and connected in series between two opposite terminals of the device, namely a sub-semiconductor device (1) able to withstand only low voltages in the blocking state thereof and a voltage-limiting part (2) able to withstand high voltages in the blocking state of the device and adapted to protect said sub-semiconductor device by taking a major part of the voltage over the device in the blocking state thereof.