Semiconductor device including a crystalline silicon film
US6091115A · kind A · utility
19Cited by
5References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 14, 1997 |
| Grant date | Jul 18, 2000 |
| Priority date | — |
| Expiry date | Nov 14, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/60
Abstract
A semiconductor device having a CMOS structure comprising N-channel type and P-channel type insulated gate semiconductor devices combined in a complementary manner, wherein the threshold voltage of the insulated gate semiconductor devices is controlled by using the difference in work function between the gate electrode and the active layer. The present semiconductor device has excellent uniformity and reproducibility.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.