Dual damascene structure formed in a single photoresist film
US6093508A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jan 6, 1999 |
| Grant date | Jul 25, 2000 |
| Priority date | — |
| Expiry date | Jan 6, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2221/1021
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The present invention is embodied in a process for creating a dual damascene structure. The process includes the steps of forming a photoresist film on a substrate, pattern exposing the photoresist film to form a first pattern in the photoresist film, and forming an etch resistant layer in the first pattern. The resistant layer is resistant to a further pattern exposure and etching. The photoresist film is pattern exposed a second time to form a second pattern in the photoresist film. The sections of the photoresist film corresponding to the second pattern are removed and the substrate is etched to form the second pattern in the substrate. The resistant layer is removed and the substrate is etched to form the first pattern in the substrate. Finally, the remaining photoresist film is removed from the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.