Method of fabricating crown capacitor by using oxynitride mask

US6093601A · kind A · utility

Assignee

• NANYA TECHNOLOGY CORPORATION · TW

Inventors

• Hsin-Chuan Tsai · Taipei, TW
• Yinan Chen · Taipei, TW

Key dates

• Filing date: Oct 7, 1998
• Grant date: Jul 25, 2000
• Expiry date: Oct 7, 2018

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D1/714

Abstract

A method of fabricating a stack crown capacitor of a dynamic random access memory (DRAM) cell by using an oxynitride mask is disclosed. First, a dielectric layer and a silicon nitride layer are sequentially deposited over a substrate with an electrical device. Next, forming a contact in the silicon nitride layer and the dielectric layer, and depositing a first polysilicon layer to fill the contact. Next, depositing an oxide layer and an oxynitride layer sequentially, and then defining a bottom electrode pattern for etching the oxynitride layer and the oxide layer. Then, laterally etching the oxide layer, and depositing a second polysilicon layer. Next, etching the second polysilicon layer and the first polysilicon layer by using the oxynitride layer as a mask to form the bottom electrode. Next, removing the oxynitride layer, the oxide layer and partial silicon nitride layer. Finally, forming an interelectrode dielectric layer and a top electrode.