Method of fabricating a shallow trench isolation structure
US6093618A · kind A · utility
19Cited by
4References
24Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 16, 1998 |
| Grant date | Jul 25, 2000 |
| Priority date | — |
| Expiry date | Jun 16, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76224
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating a shallow trench isolation structure includes defining a shallow trench isolation region on a substrate covered by a first oxide layer and a mask layer. Then, covering the inner surface of the shallow trench with a silicon nitride layer. After a thermal treatment, two oxide layers are formed at the two sides of the silicon nitride layer, respectively. Then, another oxide layer is formed to fill the shallow trench. Next, a planarization process is performed until the mask layer is exposed. The mask layer and the first oxide layer and the oxide layer higher than the substrate are removed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.