Manufacturing method for a thin film with an anti-reflection rough surface
US6093646A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 2, 1998 |
| Grant date | Jul 25, 2000 |
| Priority date | — |
| Expiry date | Mar 2, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32139
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a manufacturing method for a poly film with an anti-reflection rough surface is provided. The method comprises steps of, at first, a thin film is formed over a substrate, and a amorphous silicon layer is formed over the thin film. Next, in situ a first annealing procedure is performed over the amorphous silicon layer. The amorphous silicon layer is changed into a polysilicon layer with the anti-reflection rough surface. Next, in situ a second annealing procedure is selectively performed. The polysilicon layer with the anti-reflection rough surface is doped by reacting with a gas induced. Then, the thin film and the polysilicon layer with the anti-reflection rough surface is defined, whereby the poly film with an anti-reflection rough surface is formed over the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.