Ultraviolet transmitting oxide with metallic oxide phase and method of fabrication
US6094295A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 12, 1998 |
| Grant date | Jul 25, 2000 |
| Priority date | — |
| Expiry date | Feb 12, 2018 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An electro-conductive ultraviolet light transmitting Ga.sub.2 O.sub.3 material (10) with a metallic oxide phase is deposited on a GaAs substrate or supporting structure (12). The Ga.sub.2 O.sub.3 material or thin layer comprises a minor component of metallic IrO.sub.2. The Ga.sub.2 O.sub.3 thin layer may be positioned using thermal evaporation (106) of Ga.sub.2 O.sub.3 or of a Ga.sub.2 O.sub.3 containing a compound from an Iridium crucible (108). Alternatively, the Ir may be co-evaporated (110) by electron beam evaporation. The electro-conductive ultraviolet light transmitting material Ga.sub.2 O.sub.3 with a metallic oxide phase is suitable for use on solar cells and in laser lithography.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.