Method of planarizing by polishing a structure which is formed to promote planarization
US6096230A · kind A · utility
9Cited by
5References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 29, 1997 |
| Grant date | Aug 1, 2000 |
| Priority date | — |
| Expiry date | Dec 29, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76819
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of planarizing comprising providing a substrate having an uneven surface topography, forming a layer on the substrate, wherein the layer has a graded resistance to polishing, and polishing the layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.