Method for forming pillar memory cells and device formed thereby
US6096598A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 29, 1998 |
| Grant date | Aug 1, 2000 |
| Priority date | — |
| Expiry date | Oct 29, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/482
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The preferred embodiments of the present invention overcome the limitations of the prior art by providing a method for forming the source/drain diffusions in a vertical transistor structure that results in improved channel length uniformity. In one embodiment, the present invention is used to form source/drain and bitline diffusion structures for use in pillar memory cells. Additionally, in another embodiment, the present invention is used to form source/drain and plate diffusion structures in pillar memory cells. Both preferred embodiments deposit conformal photoresist on a pillar structure and use an off-axis exposure process to recess a dopant source layer to the proper depth along the pillar. The recessed dopant source layer can then be used to form the source/drain/bitlines diffusions or source/drain/plate diffusions in the pillar memory device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.