Method for manufacturing silicon carbide semiconductor device
US6096607A · kind A · utility
94Cited by
4References
12Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Aug 17, 1998 |
| Grant date | Aug 1, 2000 |
| Priority date | — |
| Expiry date | Aug 17, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/256
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a silicon carbide semiconductor device having pn junctions is provided wherein a recessed portion is formed in a certain pattern in a surface of a substrate formed of a silicon carbide crystal, and an epitaxial layer having a conductivity type opposite to that of the substrate is grown on the substrate, and the surface of the surface is flattened so that the pn junctions appear on the surface of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.