Method of manufacturing a carbon-doped compound semiconductor layer
US6096617A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jul 22, 1996 |
| Grant date | Aug 1, 2000 |
| Priority date | — |
| Expiry date | Jul 22, 2016 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/925
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A compound semiconductor device is manufactured by forming a carbon-doped compound semiconductor device at a predetermined growth temperature on a compound semiconductor substrate, stopping the growth and changing the growth temperature of the compound semiconductor layer, including the carbon-doped compound semiconductor layer, to a predetermined temperature under an atmosphere comprising an alkylarsine, thereby avoiding the formation of free atomic hydrogen and preventing hydrogen contamination of the C-doped compound semiconductor layer. As a result, the amount of coupling between hydrogen and carbon in the carbon-doped compound semiconductor layer is significantly reduced, thereby preventing lowering of the carbon carrier concentration. The present method enables formation of a C-doped GaAs base layer without deterioration of electrical characteristics, and formation of a laser having a second clad layer of C-doped compound semiconductor layer with improved reliability.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.