Method for improved gate oxide integrity on bulk silicon
US6096625A · kind A · utility
56Cited by
8References
28Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 20, 1997 |
| Grant date | Aug 1, 2000 |
| Priority date | — |
| Expiry date | Oct 20, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3225
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a method for manufacturing a semiconductor device on a substrate. The process involves denuding the substrate by heating to create a denuded zone within the substrate. A screen oxide layer is formed prior to implanting ions into the substrate. This oxide layer remains during the implantation step. The screen oxide layer is removed when forming gates for the semiconductor device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.