Method for introduction of an impurity dopant in SiC, a semiconductor device formed by the method and a use of a highly doped amorphous layer as a source for dopant diffusion into SiC
US6096627A · kind A · utility
12Cited by
12References
17Claims
0Family size
Assignee
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Key dates
| Filing date | Jul 15, 1998 |
| Grant date | Aug 1, 2000 |
| Priority date | — |
| Expiry date | Jul 15, 2018 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/931
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for introducing an impurity dopant into a semiconductor layer of SiC is provided. Ions are implanted into the semiconductor layer so that a near surface of the semiconductor layer becomes doped and amorphous. The semiconductor layer is then annealed at a temperature so that the dopant diffuses into a non-implanted sublayer of the semiconductor layer below the near surface layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.