Method of fabricating capacitor capable of maintaining the height of the peripheral area of the capacitor

US6100136A · kind A · utility

Assignee

• Worldwide Semiconductor Manufacturing Corporation · TW

Inventors

• Dahcheng Lin
• Chih-Hsing Yu · Baoshan, TW

Key dates

• Filing date: Jun 29, 1999
• Grant date: Aug 8, 2000
• Expiry date: Jun 29, 2019

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B12/033

Abstract

A method of forming a capacitor. A substrate comprises a cell array area and a peripheral area. A dielectric layer is formed on the substrate. The covering layer is formed on the dielectric layer. The contact electrode is formed through the dielectric layer and the covering layer. The first oxide layer is formed over the substrate. A portion of the first oxide layer is removed to form an opening, which exposes the contact electrode. A conformal preserve layer is formed over the substrate. A second oxide layer is formed over the substrate. A portion of the second oxide layer in the cell array area is removed to form an opening, which exposes the contact electrode. A conformal first conductive layer is formed over the substrate to cover the second oxide layer and the opening. A third oxide layer is formed over the substrate to cover the first conductive layer and fill the opening. A planarization step is performed to remove the third oxide layer, the first conductive layer, and the second oxide layer until the preserve layer in the peripheral area is exposed. The third oxide layer and the second oxide layer in the cell array area are removed to expose conductive layer. A selective he…