Method for forming a horizontal surface spacer and devices formed thereby
US6100172A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 29, 1998 |
| Grant date | Aug 8, 2000 |
| Priority date | — |
| Expiry date | Oct 29, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a method for forming self-aligned spacers on the horizontal surfaces while removing spacer material from the vertical surfaces. The preferred method uses a resist that can be made insoluble to developer by the use of an implant. By conformally depositing the resist over a substrate having both vertical and horizontal surfaces, implanting the resist, and developing the resist, the resist is removed from the vertical surfaces while remaining on the horizontal surfaces. Thus, a self-aligned spacer is formed on the horizontal surfaces while the spacer material is removed from the vertical surfaces. This horizontal-surface spacer can then be used in further fabrication. The preferred method can be used in many different processes where there is exists a need to differentially process the vertical and horizontal surfaces of a substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.