Method of producing a barrier layer in a semiconductor body

US6100187A · kind A · utility

Assignee

• Siemens Aktiengesellschaft · DE

Inventors

• Frank Hintermaier · Hersbruck, DE
• Carlos Mazure-Espejo · Zorneding, DE

Key dates

• Filing date: Jun 29, 1998
• Grant date: Aug 8, 2000
• Expiry date: Jun 29, 2018

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76838
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A barrier layer is formed on the contact plug of the semiconductor body. The barrier layer prevents oxidation of the contact plug. The barrier layer is produced by chemically reacting a prestructured metallic transition material with one or more reaction partners.