Frank Hintermaier
33Patents
13h-index
24Co-inventors
73Inventor score
Filing activity: Nov 20, 1997 → Apr 30, 2004
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6120846A | Method for the selective deposition of bismuth based ferroelectric thin films by chemical vapor deposition | Electricity | 57 | Expired |
| US6010744A | Method for nucleation controlled chemical vapor deposition of metal oxide ferroelectric thin films | Emerging Cross-Sectional Technologies | 42 | Expired |
| US6787186B1 | Method of controlled chemical vapor deposition of a metal oxide ceramic layer | Chemistry; Metallurgy | 28 | Expired |
| US6444264B2 | Method for liquid delivery CVD utilizing alkane and polyamine solvent compositions | Chemistry; Metallurgy | 22 | Expired |
| US6204158A | Reduced diffusion of a mobile specie from a metal oxide ceramic into the substrate | Electricity | 19 | Expired |
| US6133051A | Amorphously deposited metal oxide ceramic films | Electricity | 19 | Expired |
| US6350643B1 | Reduced degradation of metal oxide ceramic due to diffusion of a mobile specie therefrom | Electricity | 18 | Expired |
| US6156673A | Process for producing a ceramic layer | Chemistry; Metallurgy | 17 | Expired |
| US6100187A | Method of producing a barrier layer in a semiconductor body | Electricity | 17 | Expired |
| US6214105A | Alkane and polyamine solvent compositions for liquid delivery chemical vapor deposition | Emerging Cross-Sectional Technologies | 16 | Expired |
| US7005303B2 | Low temperature chemical vapor deposition process for forming bismuth-containing ceramic thin films useful in ferroelectric memory devices | Electricity | 15 | Expired |
| US6438019B2 | Ferroelectric random access memory (FeRAM) having storage capacitors with different coercive voltages | Electricity | 14 | Expired |
| US6303391A | Low temperature chemical vapor deposition process for forming bismuth-containing ceramic films useful in ferroelectric memory devices | Electricity | 13 | Expired |
| US6177135A | Low temperature CVD processes for preparing ferroelectric films using Bi amides | Physics | 11 | Expired |
| US6586348B2 | Method for preventing etching-induced damage to a metal oxide film by patterning the film after a nucleation anneal but while still amorphous and then thermally annealing to crystallize | Electricity | 7 | Expired |
| US6180420A | Low temperature CVD processes for preparing ferroelectric films using Bi carboxylates | Electricity | 7 | Expired |
| US6730523B2 | Low temperature chemical vapor deposition process for forming bismuth-containing ceramic thin films useful in ferroelectric memory devices | Electricity | 7 | Expired |
| US6713797B1 | Textured Bi-based oxide ceramic films | Electricity | 6 | Expired |
| US6500489B1 | Low temperature CVD processes for preparing ferroelectric films using Bi alcoxides | Electricity | 5 | Expired |
| US6168988A | Method for producing barrier-free semiconductor memory configurations | Electricity | 5 | Expired |
| US6258153A | Device for the deposition of substances | Emerging Cross-Sectional Technologies | 4 | Expired |
| US6037002A | Process for producing thin films of oxide ceramic | Chemistry; Metallurgy | 4 | Expired |
| US6316802A | Easy to manufacture integrated semiconductor memory configuration with platinum electrodes | Electricity | 3 | Expired |
| US6790676B2 | Method for producing a ferroelectric layer | Electricity | 3 | Expired |
| US6730562B2 | Method of patterning ferroelectric layers | Electricity | 2 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.