Light-emitting diode having a layer of AlGaInP graded composition
US6100544A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 20, 1998 |
| Grant date | Aug 8, 2000 |
| Priority date | — |
| Expiry date | May 20, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/824
Abstract
A light emitting diode includes a double hetero structure containing an upper cladding layer with a graded composition. The light emitting diode comprises a GaAs substrate, a first ohmic contact to the substrate, an AlGaInP lower cladding layer formed on the GaAs substrate, an AlGaInP active layer formed on the lower cladding layer, an AlGaInP upper cladding layer formed on the active layer and a second ohmic contact. The AlGaInP upper cladding layer has a graded composition which increases the LED brightness and decreases the forward bias voltage of the light emitting diode. The graded composition can also be used in the upper semiconducting layer of a conventional p-n junction light emitting diode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.