GaN type semiconductor device
US6100545A · kind A · utility
125Cited by
4References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 13, 1998 |
| Grant date | Aug 8, 2000 |
| Priority date | — |
| Expiry date | Oct 13, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/841
Abstract
A GaN type semiconductor layer having a new structure is provided which incorporates a substrate having surface which is opposite to a GaN type semiconductor layer and which is made of Ti.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.