Nonvolatile cell

US6100560A · kind A · utility

Assignee

• Cypress Semiconductor Corporation · US

Inventor

• Simon J. Lovett · Meridian, US

Key dates

• Filing date: Mar 26, 1999
• Grant date: Aug 8, 2000
• Expiry date: Mar 26, 2019

Classification

• Technology area (CPC G): Physics
• CPC primary: G11C2216/10

Abstract

A nonvolatile cell comprising a first device comprising a first transistor type and a second device comprising a second transistor type. The first device may have a gate, a source, a drain and a gate oxide layer over the gate. The second device may have a gate, a source, a drain and a floating gate formed between the gate of said first device and the gate of the second device. The floating gate may be configured to store a charge in response to (i) a first voltage applied to the source and drain of said first device and (ii) a second voltage applied to the source and drain of the second device.