Silicon carbide barrier layers for porous low dielectric constant materials
US6100587A · kind A · utility
47Cited by
15References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 26, 1999 |
| Grant date | Aug 8, 2000 |
| Priority date | — |
| Expiry date | Aug 26, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76831
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Interconnects in porous dielectric materials are coated with a SiC-containing material to inhibit moisture penetration and retention within the dielectric material. Specifically, SiC coatings doped with boron such as SiC(BN) show particularly good results as barrier layers for dielectric interconnects.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.