Silicon-integrated thin-film structure for electro-optic applications
US6103008A · kind A · utility
45Cited by
8References
15Claims
0Family size
Assignee
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Key dates
| Filing date | Jul 30, 1998 |
| Grant date | Aug 15, 2000 |
| Priority date | — |
| Expiry date | Jul 30, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02293
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A crystalline thin-film structure suited for use in any of an number of electro-optic applications, such as a phase modulator or a component of an interferometer, includes a semiconductor substrate of silicon and a ferroelectric, optically-clear thin film of the perovskite BaTiO.sub.3 overlying the surface of the silicon substrate. The BaTiO.sub.3 thin film is characterized in that substantially all of the dipole moments associated with the ferroelectric film are arranged substantially parallel to the surface of the substrate to enhance the electro-optic qualities of the film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.