Photoresist compositions comprising norbornene derivative polymers with acid labile groups
US6103445A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 7, 1997 |
| Grant date | Aug 15, 2000 |
| Priority date | — |
| Expiry date | Mar 7, 2017 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/039
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Provided herein are photoresist compositions for use particularly in 193 nm lithography. These compositions generally comprise a polymer of norbornene and a photo acid generator. The disclosed compositions provide transparency at wavelengths of approximately 190-200 nm, combined with high etch resistance. The polymers also provide hydrophilicity for good positive-tone development characteristics and high glass transition temperatures. Also disclosed is a process for microfabrication utilizing the claimed compositions. A further aspect of the invention is a plasticizer comprising 4,8-di-t-butyl-tricyclo(5.2.1.0.sup.2,6)decanedicarboxylate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.