Method for manufacturing semiconductor integrated circuit device having a titanium electrode
US6103566A · kind A · utility
14Cited by
3References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 9, 1996 |
| Grant date | Aug 15, 2000 |
| Priority date | — |
| Expiry date | Dec 9, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/716
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A dynamic random access memory or the like, in which in order to prevent the breakdown voltage deterioration of a capacitive element when a TiN film of an electrode material is deposited by the CVD method over a tantalum film constituting the capacitor insulating film of the capacitive element, a passivation film is formed in advance over the surface of the tantalum oxide film to prevent the tantalum oxide film from contacting a nitrogen-containing reducing gas, when the TiN film is deposited over the tantalum oxide film by the CVD method using a titanium-containing source gas and the nitrogen-containing reducing gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.