Hydrogen ambient process for low contact resistivity PdGe contacts to III-V materials
US6103614A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 2, 1998 |
| Grant date | Aug 15, 2000 |
| Priority date | — |
| Expiry date | Sep 2, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28575
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention uses hydrogen ambient atmosphere to directly form PdGe contacts on Group III-V materials. Specific GaAs HBT's have been formed in a 100% H.sub.2 ambient, and demonstrate low etch reactivity attributable to the significant incorporation of hydrogen. The LP-MOCVD method used to demonstrate the invention produced a specific contact resistivity of less than 1.times.10.sup.-7 .OMEGA.-cm-.sup.-2, at preferred conditions of a 100% hydrogen ambient, 300.degree. C., and 15 minute reaction time. This is believed to be the lowest known resistance of any alloy method employed for PdGe on GaAs. Equally significant, the contacts demonstrate increased durability during etching.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.