Polysilicon defined diffused resistor
US6104277A · kind A · utility
11Cited by
10References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 30, 1997 |
| Grant date | Aug 15, 2000 |
| Priority date | — |
| Expiry date | May 30, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/209
Abstract
A resistor having a diffused impurity region in a semiconductor substrate, an insulated gate surrounding and defining the resistor, and a pair of separated conductive contacts to the diffused region within the boundary of the insulated gate for applying and receiving current passing through the resistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.