Layer crystal structure oxide, production method thereof, and memory element using the same
US6106616A · kind A · utility
2Cited by
4References
21Claims
0Family size
Assignee
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Key dates
| Filing date | Sep 9, 1998 |
| Grant date | Aug 22, 2000 |
| Priority date | — |
| Expiry date | Sep 9, 2018 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/225
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A production method of a crystal structure oxide that includes the steps of evaporating the material by heating the material to generate a gas phase and precipitating crystals from the gas phase at a precipitating part so as to produce a layer crystal structure oxide. The precipitating part is provided away from the material in a range of greater than or equal to about 10 mm to about 30 mm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.