Method of fabricating a salicide-structured MOS semiconductor device having a cobalt disilicied film
US6107096A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Apr 1, 1996 |
| Grant date | Aug 22, 2000 |
| Priority date | — |
| Expiry date | Apr 1, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28562
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a method of fabricating a semiconductor device, including the steps of (a) forming a gate electrode in device formation regions on a semiconductor substrate having first conductivity, (b) forming diffusion layers in the device formation regions, the diffusion layers having second conductivity, (c) removing naturally oxidized films having been formed on both the diffusion layers and the gate electrode, in vacuum condition, (d) selectively forming cobalt films on both the diffusion layers and the gate electrode by chemical vapor deposition using gas produced by gasifying cobalt organic compound, (e) carrying out thermal annealing to selectively form cobalt disilicide (CoSi.sub.2) films on both the diffusion layers and the gate electrode, the semiconductor substrate being maintained in vacuum condition during the steps (c) to (e), and (f) forming metal wirings in electrical connection with both the diffusion layers and the gate electrode with an interlayer insulating film sandwiched therebetween. The method makes it possible to form high purity thin cobalt films having uniform thickness with high reproducibility, and to prevent both increased leak curren…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.