Method of making semiconductor devices having protruding contacts
US6107120A · kind A · utility
12Cited by
5References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 23, 1999 |
| Grant date | Aug 22, 2000 |
| Priority date | — |
| Expiry date | Mar 23, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/15788
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of making semiconductor devices with contacts protruding from openings in a passivation layer over an active chip area. Inside each opening, a relatively hard barrier layer is provided and a flash-plated film is applied to subsequently form a relatively soft diffusion barrier layer when a protruding contact is formed. Two semiconductor devices with electrodes are joined by embedding relatively hard electrodes of a first device into relatively soft electrodes of a second device. A reducing agent can be incorporated into an insulating resin applied between semiconductor chips at areas other than the bonded electrodes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.