Method for forming a capacitor structure
US6107136A · kind A · utility
38Cited by
10References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 17, 1998 |
| Grant date | Aug 22, 2000 |
| Priority date | — |
| Expiry date | Aug 17, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/716
Abstract
A dielectric film (110) is formed overlying a semiconductor device substrate (10). A dielectric post (204) having an outer peripheral boundary having sidewalls is formed over the dielectric film (110). A first conductive film (402) is deposited at least along the sidewalls of the dielectric post (204) to form a lower electrode. A capacitor dielectric film (1801) is deposited on the first conductive film, and a upper electrode (1802) is formed on the capacitor dielectric film (1801).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.