Bruce E. White
27Patents
17h-index
24Co-inventors
77Inventor score
Filing activity: Apr 25, 1997 → Mar 4, 2009
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6297095A | Memory device that includes passivated nanoclusters and method for manufacture | Electricity | 142 | Expired |
| US6320784A | Memory cell and method for programming thereof | Physics | 102 | Expired |
| US6576532B1 | Semiconductor device and method therefor | Emerging Cross-Sectional Technologies | 87 | Expired |
| US6897095B1 | Semiconductor process and integrated circuit having dual metal oxide gate dielectric with single metal gate electrode | Electricity | 64 | Expired |
| US5773314A | Plug protection process for use in the manufacture of embedded dynamic random access memory (DRAM) cells | Electricity | 60 | Expired |
| US6706599B1 | Multi-bit non-volatile memory device and method therefor | Electricity | 59 | Expired |
| US6130102A | Method for forming semiconductor device including a dual inlaid structure | Electricity | 52 | Expired |
| US6330184A | Method of operating a semiconductor device | Physics | 46 | Expired |
| US6107136A | Method for forming a capacitor structure | Electricity | 38 | Expired |
| US6307782A | Process for operating a semiconductor device | Physics | 29 | Expired |
| US6958265B2 | Semiconductor device with nanoclusters | Electricity | 28 | Expired |
| US6531731B2 | Integration of two memory types on the same integrated circuit | Emerging Cross-Sectional Technologies | 27 | Expired |
| US6274899A | Capacitor electrode having conductive regions adjacent a dielectric post | Electricity | 25 | Expired |
| US6235603A | Method for forming a semiconductor device using an etch stop layer | Electricity | 24 | Expired |
| US6172905A | Method of operating a semiconductor device | Physics | 24 | Expired |
| US6274424A | Method for forming a capacitor electrode | Electricity | 23 | Expired |
| US6790727B2 | Integration of two memory types on the same integrated circuit | Emerging Cross-Sectional Technologies | 22 | Expired |
| US7361543B2 | Method of forming a nanocluster charge storage device | Electricity | 14 | Expired |
| US6855979B2 | Multi-bit non-volatile memory device and method therefor | Electricity | 11 | Expired |
| US7517747B2 | Nanocrystal non-volatile memory cell and method therefor | Emerging Cross-Sectional Technologies | 11 | Active |
| US7910482B2 | Method of forming a finFET and structure | Electricity | 10 | Active |
| US7361567B2 | Non-volatile nanocrystal memory and method therefor | Electricity | 9 | Expired |
| US7361561B2 | Method of making a metal gate semiconductor device | Electricity | 7 | Active |
| US7800164B2 | Nanocrystal non-volatile memory cell and method therefor | Emerging Cross-Sectional Technologies | 4 | Active |
| US7820491B2 | Light erasable memory and method therefor | Electricity | 1 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.