Method for forming field oxide of semiconductor device and the semiconductor device
US6107144A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 4, 1998 |
| Grant date | Aug 22, 2000 |
| Priority date | — |
| Expiry date | May 4, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76202
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a field oxide of a semiconductor device and the semiconductor device. In order to form the field oxide, first, an element isolation mask is constructed on a semiconductor substrate. Then, a nitride spacer is formed at the side wall of the mask. At this time, a nitrogen-containing polymer is produced on the field region. The exposed region of the semiconductor substrate is oxidized at a temperature of 1,050-1,200.degree. C. to grow a recess-oxide while transforming the nitrogen-containing polymer into a nitride. Thereafter, the recess oxide is removed, together with the nitride, to create a trench in which the field oxide is formed through thermal oxidation. Therefore, the method can prevent an FOU phenomenon upon the growth of a field oxide and improve the field oxide thinning effect, thereby bringing a significant improvement to the production yield and the reliability of a semiconductor device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.