Aluminum spiking inspection method
US6107201A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Apr 28, 1995 |
| Grant date | Aug 22, 2000 |
| Priority date | — |
| Expiry date | Apr 28, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28512
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for inspection which involves the complete and sequential removal of an aluminum containing metallization layer, and other metal and insulator layers, from the surface of a silicon substrate. The layers are removed through sequential chemical etch processes tailored specifically to the composition of the individual layers. Upon removal of all layers, the surface of the silicon substrate is etched in a buffered aqueous etchant solution. The surface of the silicon substrate may then be inspected with the aid of an optical microscope to determine level to which the aluminum containing metallization layer has spiked into the silicon substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.