Hydrogen plasma downstream treatment equipment and hydrogen plasma downstream treatment method
US6107215A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 13, 1998 |
| Grant date | Aug 22, 2000 |
| Priority date | — |
| Expiry date | Mar 13, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02046
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A hydrogen plasma downstream treatment equipment comprises a first gas supply source for supplying a hydrogen gas, a second gas supply source for supplying a nitrogen fluoride gas, and a tube-like chamber used for surface treatment of a semiconductor layer by use of the hydrogen gas and the nitrogen fluoride gas. The chamber includes a plasma generator for activating the hydrogen gas and the nitrogen fluoride gas by introducing the nitrogen fluoride gas in which a flow rate ratio of the hydrogen gas and the nitrogen fluoride gas is in excess of 4, a processor placed in a downstream of the plasma generator to place the semiconductor layer therein, and gas flow controlling means for controlling the first gas supply source and the second gas supply source so as to set a flow rate of the nitrogen fluoride gas four times a flow rate of the hydrogen gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.