Multiple polarity mask exposure method
US6110624A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 4, 1999 |
| Grant date | Aug 29, 2000 |
| Priority date | — |
| Expiry date | Jan 4, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K2203/0577
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A patterned mask and method of forming a patterned mask over a substrate, comprising forming a first resist layer over the substrate, forming a second resist layer over the first resist layer, patterning the first resist using energy selective to the first resist layer to form a first patterned resist, and patterning the second resist using energy selective to the second resist layer to form a second patterned resist, wherein the first patterned resist and the second patterned resist form the patterned mask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.