Method of manufacturing semiconductor device
US6110647A · kind A · utility
8Cited by
3References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 17, 1998 |
| Grant date | Aug 29, 2000 |
| Priority date | — |
| Expiry date | Feb 17, 2018 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/0035
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method of manufacturing a semiconductor device, comprises the steps of forming a first transfer pattern corresponding to a mask pattern on a major surface side of a semiconductor substrate through a first mask plate on which the first mask pattern having a straight portion and a bent portion is formed, and forming a second transfer pattern corresponding to a second mask pattern on a major surface side of the semiconductor substrate through a second mask plate on which the second mask pattern having a pattern arranged at a position corresponding to the straight portion is formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.