Method for making DRAM capacitor strap
US6110792A · kind A · utility
16Cited by
13References
10Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Aug 19, 1998 |
| Grant date | Aug 29, 2000 |
| Priority date | — |
| Expiry date | Aug 19, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/038
Abstract
A method of forming a trench capacitor comprises steps of forming a trench in a substrate, partially filling the trench with a first conductive material, lining a portion of the trench above the first conductive material with a collar material, etching the collar material to a strap depth below a top of the trench, and filling the trench with a second conductive material, wherein a portion of the second conductive material positioned between the strap depth and the top of the trench comprises a buried strap.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.