Semiconductor having self-aligned, buried etch stop for trench and manufacture thereof
US6110794A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Aug 19, 1998 |
| Grant date | Aug 29, 2000 |
| Priority date | — |
| Expiry date | Aug 19, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3083
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor fabrication process uses a buried, oxygen-rich layer as a stop etch in a trench isolation area, with minimal masking. According to one embodiment, the process involves applying a mask to protect selected portions of a silicon-based substrate, and then using the mask to implant an oxygen-based substance into unmasked portions of the substrate, thereby forming a buried oxygen layer at a selected depth within the substrate. The same mask is then used in an etching process to form the desired trench structure. The depth of the trench is defined as a result of terminating the etch process upon reaching the buried oxygen layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.