Isotropic polysilicon plus nitride stripping
US6110838A · kind A · utility
224Cited by
10References
13Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Apr 29, 1994 |
| Grant date | Aug 29, 2000 |
| Priority date | — |
| Expiry date | Apr 29, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76221
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A dry etch process for stripping LOCOS nitride masks (302) with fluorine based removal of oxynitride (312) followed by fluorine plus chlorine based removal of nitride (302) and any silicon buffer layer (303) without removal of pad oxide (304).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.