Gunn diode having a graded aluminum gallium arsenide active layer and Gunn diode oscillator
US6111265A · kind A · utility
1Cited by
3References
6Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Mar 25, 1999 |
| Grant date | Aug 29, 2000 |
| Priority date | — |
| Expiry date | Mar 25, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N80/107
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A Gunn diode includes a layered structure including at least a cathode layer, an anode layer, and an active region interposed between the cathode and anode layers, wherein at least a portion of the active region is an AlGaAs layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.