Silicon-on-insulator MOS structure
US6111293A · kind A · utility
10Cited by
9References
16Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | May 11, 1998 |
| Grant date | Aug 29, 2000 |
| Priority date | — |
| Expiry date | May 11, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6708
Abstract
A silicon-on-insulator metallic oxide semiconductor structure having a double implanted source region. By etching a trench contact window in the double implanted source region and then depositing a metal into the trench to form a metal plug, contact between the source terminal and the substrate is established. Consequently, floating body effect of a silicon-on-insulator device is prevented without having to provide additional surface area to accommodate the contact window.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.