Ultra-low pressure metal-organic vapor phase epitaxy (MOVPE) method of producing II-IV semiconductor compounds and II-VI semiconductor compounds thus produced
US6113691A · kind A · utility
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3References
36Claims
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Key dates
| Filing date | May 26, 1995 |
| Grant date | Sep 5, 2000 |
| Priority date | — |
| Expiry date | May 26, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2304/04
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Semiconductor compounds and a method for producing the same are provided wherein a method for growing at least one epitaxial layer of a II-VI semiconductor compound using MOVPE is used, the method including the steps of subjecting a substrate to organometallic and hydride precursor compounds in a MOVPE reactor at ultra low pressure, i.e. a pressure in the range of about 10 to 1 mTorr, whereby the organometallic and hydride precursor compounds react at a substrate surface without substantial reaction in the gas phase. The epitaxial layers and semiconductor compounds are useful in blue laser devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.