High-speed rotational vapor deposition apparatus and high-speed rotational vapor deposition thin film method
US6113705A · kind A · utility
Assignees
Inventors
Key dates
| Filing date | Aug 20, 1998 |
| Grant date | Sep 5, 2000 |
| Priority date | — |
| Expiry date | Aug 20, 2018 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/4584
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
There is provided a vapor deposition apparatus for forming a thin film which includes plural reaction gas supply ports at the top portion of a hollow reactor, an exhaust port at the bottom of the reactor, a rotational substrate holder provided inside the reactor on which a wafer substrate is mounted. A straightening vane having plural gas holes formed therein is provided on an upper portion of the reactor. The reactor is partitioned into upper and lower portions which have different inside diameters, with the inner diameter of the upper portion being smaller than the inner diameter of lower portion. The lower end of the upper portion and the upper end of the lower portion are linked by a linking portion which has a predetermined shape to make continuous the hollow inside of the reactor. A thin film is formed on the surface of a wafer substrate, which is placed on the rotational substrate holder, by supplying a reaction gas into the reactor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.