Copper sputtering target assembly and method of making same
US6113761A · kind A · utility
32Cited by
1References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 2, 1999 |
| Grant date | Sep 5, 2000 |
| Priority date | — |
| Expiry date | Jun 2, 2019 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C14/3407
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Described is a sputtering target assembly of high purity copper diffusion bonded to a precipitation hardened aluminum alloy backing plate via an intermediate layer of a CuCr alloy and in which the copper contains a micro alloy addition of at least one of Ag, Su, Te, In, Mg, B, Bi, Sb and/or P. Also disclosed is a method that includes preparation of a master alloy for addition to high purity copper and fabricating, heat treating and diffusion bonding processes to produce a sputtering target assembly with a stable fine-grained target microstructure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.