Magnetic element, and magnetic head and magnetic memory device using thereof
US6114056A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 8, 1998 |
| Grant date | Sep 5, 2000 |
| Priority date | — |
| Expiry date | May 8, 2018 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/12111
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magnetic element comprises a granular magnetic film which has ferromagnetic fine particles dispersed in a dielectric matrix and does not display superparamagnetism and further possesses a finite coercive force, and a ferromagnetic film. A granular magnetic film and a ferromagnetic film are stacked or arrayed along one surface of a substrate and constitutes a ferromagnetic tunnel junction film. In the ferromagnetic tunnel junction film, the granular magnetic film functions as a barrier. Of the granular magnetic film and the ferromagnetic film, by varying spin direction of one ferromagnetic film through an external magnetic field, a giant magnetoresistance effect is manifested. Such a magnetic element is characterized in that magnetoresistance change rate is large, saturation magnetic field is small, resistance of the element can be controlled to an appropriate value, performance is small in its variation and stable.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.