Method of fine feature edge tuning with optically-halftoned mask
US6114071A · kind A · utility
238Cited by
13References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 6, 1998 |
| Grant date | Sep 5, 2000 |
| Priority date | — |
| Expiry date | Apr 6, 2018 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/36
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A photolithography mask for optically transferring a lithographic pattern corresponding to an integrated circuit from the mask onto a semiconductor substrate by use of an optical exposure tool. The mask comprises a plurality of features corresponding to elements forming the integrated circuit, and a plurality of non-resolvable biasing segments disposed on an edge of at least one of the features.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.